The Development of Dry Film Photoresist with 15um Lines and Spaces Resolution for Semi-Additive Processing
Next generation IC substrate designs will feature higher interconnect density and faster signal speed than current designs.
Circuitization of these substrates uses copper pattern plating followed by differential etching,which is called “semi-additive
processing”. Dry film photoresist is well suited for semi-additive processing because it is available at the proper resist
thickness with excellent thickness uniformity.
The performance requirements for dry film photoresist for semi-additive processing are defined as process compatibility,
environmentally friendly chemistry,ease of handling,and high yield. According to “voice of the customer”,key dry film
attributes are high resolution,good adhesion to a variety of copper surfaces,good line reproducibility,high yield,and clean
stripping after plating with conventional alkaline solution,that is compatible with existing aqueous waste water treatment.
A novel dry film photoresist for the next generation IC substrate substrates was developed with new polymer technology for
binder polymer and monomer combinations and novel photo initiator systems. This paper covers dry film performance
derived from requirements voiced in the VOC.