A Microvia Damage Model
An electrical model of a thermally damaged microvia has been constructed incorporating observations from electrical test, Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and electron backscatter diffraction (EBSD)(1,2). These observations indicate that the change in the structure during thermal cycling, typically cracking, occurs in the vicinity of an internal interface in the microvia, in the immediate vicinity of the electroless copper deposition. This localized damage region allows construction of the model referencing post-test to pre-test resistance ratios.
The model uses a five percent resistance change as an indicator of significant damage in the interface layer which incorporates only a small amount of the overall copper in the microvia. The sensitivity of the model to initial conditions has been assessed by varying the distribution of copper in the interface and microvia regions.
Observations(1,2) indicate that this resistance increase is usually due to a crack in the interface, and the model confirms that a crack that generates a five percent overall resistance shift would impact approximately ninety percent of the interface area. In cases where no crack is observed, the calculated increase in resistance can be compared to the effect of electron scattering from crystallographic defects, such as vacancies, lattice defects, grain boundaries, and impurities. Finally, there are cases where the microvia has been observed to fail after a period in storage. The analysis considers that these could be caused by completely separated interfaces which maintain an Ohmic contact through either mechanical contact or tunneling.