Controlling Recrystallisation in Plated Layers Through the Use of Additives
This work compares the influence of a plating additive that has been applied to a commercially available electroless copper system and how its use impacts the morphology of the overall final plated structure. Through testing on insulating materials in addition to single and polycrystalline copper substrates, each electroless Cu solution is shown to be influential in suppressing grain growth in certain crystal orientations, which can lead to significant physical differences across the final plated interface. It is interesting to note that while the degree of epitaxy between the substrate Cu and the electroless Cu can be influenced dependent upon the additive utilized, this can occur independent of the impact between the electroless and electrolytic Cu. To wit, an epitaxial interface between the substrate and electroless Cu is not strictly indicative that an epitaxial structure will occur between the electroless and electrolytic Cu.
The plating additive under investigation is shown to support epitaxial or “bottom-up” recrystallisation for selective grain orientations originating within the substrate material and will typically facilitate grain growth in the (100) and (110) orientations while a solution without the additive supports the (110) and (111) orientations. Such performance is offered as occurring as a result of the characteristic electroless copper surface which consists predominantly of large, but low index {100} facets, in contrast to the smaller but higher order facets {221} that occur when the additive is not employed. When applied to polycrystalline substrates, either of the electroless copper processes considered within this investigation have been shown to facilitate a fully epitaxial structure, which arises from the situation that either of the “preferred” crystal orientations are available within the substrate.
Through careful selection of the additive packages used within an electroless Cu system, there can be significant control gained over how not only the electroless layer itself crystalizes, but also the response of the subsequent electroplated layer as well. Both of these are understood to have significant impact on the physical and mechanical properties of such an interface, which in turn can be influential in achieving the desired overall properties.
Through an increased understanding of how the additives used in a state-of-the-art electroless copper process function, and the impact that they subsequently have on the crystallography of the final deposit, it is anticipated that an improved overall joint integrity can be achieved. It is now considered that a fully epitaxial microstructure across the target pad – ELESS – ELYTC Cu interfaces is desirable as this offers a higher resistance to crack propagation and so enhances overall reliability. This is clearly beneficial in many plating applications, especially those containing microvias, where historically decreasing dimensions and aggressive operational demands in combination with an increased use of stacked BMV designs has led to undesirable interconnect failures around the target pad – electroless Cu – electroplated Cu interface.