The Semi-Additive Process (SAP) is a standard process to enable very fine lines and spaces to produce highly sophisticated Integrated Circuit Substrates (ICS). When operating with lines and spaces (L/S) of less than 10/10 µm, the copper thickness variation is one of the critical parameters; it must be controlled within a tight range to avoid reliability problems in assembly or during the lifetime, as described in several papers [1, 2]. Also, new packaging technologies—like 2.1D and 2.3D—are requiring L/S in the rage of 2-5 µm for the Redistribution Layer (RDL), as shown in the examples in Figures 1 and 2 (shown in paper).
These new 2.1D or 2.3D packaging technologies do have much higher requirements on the electroplated copper than the ones deposited with the electrolytes used for PCB or standard IC substrates, with L/S of less than 15 µm. The new copper plating electrolytes and processes need to be able to fill the technology gap between current semiconductor technology and the current IC-substrate technology, as shown in the Figure 3 (shown in paper).
The challenges and requirements for such a new copper electrolyte to fill the gap between the organic IC substrate and the semiconductor technology are increasing more and more with the shrinkage of the L/S and the smaller pattern features on the substrate. The following characteristics of a new copper electrolyte are getting very important:
1. Excellent shape of lines/tracks
2. Blind Microvia (BMV) filling with low dimple
3. A very good within-panel distribution (WPD) of the plated copper
4. Surface appearance of the electroplated copper with low surface roughness
5. Excellent copper-crystal structure, ductility, and tensile strength to enable a good reliability
6. Possibility to plate at a high-current density to operate under low manufacturing cost
7. Cyclic Voltammetry Stripping (CVS) controlled dosing of electrolytes
8. Particle-controlled electrolytes (manufactured under cleanroom environments)
9. Controlled purity of the electrolytes (trace metal controlled)
Therefore, the continuity of innovation and invention as expected by Moore’s Law is needed also on the copper electrolyte side to reduce cost and increase capability to cope with the latest packaging technologies like 2.1D or 2.3D. Challenges like within-panel distribution become a critical factor for the subsequent processing steps.
This technical paper will contain results of copper thickness and the copper thickness variation also called within-panel distribution (WPD), microsection pictures, design of experiments (DOE) results, BMV filling performance, ductility results, and copper crystal structures of the new developed electrolyte. Finally, the chemistry has been further enhanced by producing it under semiconductor standards using high-purity chemicals and ultrafine filtration, tracing all by-products to have the utmost control of the copper plating chemistry. Such a new copper electrolyte was developed to cope with these challenges. All the characteristics mentioned above have been tested with the new electrolyte formulation. Because of the success of this new formulation, it is already used in more than 15 production lines worldwide..