Root Cause of Corrosion on Aluminum Bond Pads
During the process from wafer fabrication to completing the final plastic package there are a number of upstream processes that negatively impact subsequent operations. Problems at wirebond can be traced directly to both fab and saw operations. Analysis of bond pads from the fab reveal traces of flourine that can lead to the formation of HF which is highly corrosive to aluminum and some passivation materials. Most post fab processing operations such as test maintain high humidity levels to minimize ESD/EOS damage to the die. The same high moisture level conditions that are required to minimize ESD/EOS damage supply the necessary moisture to cause trace halogens to form HF causing further corrosion on the bond pads.
Provided with an infinite source of H2O,the flourine becomes a reactive ion that seeks aluminum to form aluminum fluorides. In this reaction the halogen ion is liberated and OH ions in the water reacts with Al to form Al (OH)x and then AlOF. Some of the AlOF becomes AlO and frees the F to become HF. The halogen can now react with a new aluminum atom to repeat the process forming layers up to hundreds of angstroms thick. To terminate the process the flourine has to be eliminated else wire bond ends up with a bond pad that is both difficult to process and can lead to long term reliability issues.
This paper discusses how to remove those halogens,eliminate saw corrosion and improve wirebonding without the use of legacy argon plasma solutions which only serve to redeposit both detectable carbon and halogen elsewhere on the wafer/die. This process also demonstrates a solution that is less than a “milli-penny” per die compared with the expensive and unreliable argon plasma. Results to date have shown that not only can corrosion be eliminated at saw but the die received at wirebond has a thinner oxide layer than material leaving the fab (~20A).