BVA: Molded Cu Wire Contact Solution for Very High Density Package-on- Package (PoP) Applications
Stacking heterogeneous semiconductor die (memory and logic) within the same package outline can be considered for less complex applications but combining the memory and processor functions in a single package has compromised test efficiency and overall package assembly yield. Separation and packaging the semiconductor functions into sections,on the other hand,has proved to be more efficient and,even though two interposers are required,more economical. The separated logic and memory sections are configured with the same uniform outline for vertical stacking (package-on-package). The most common configuration places the logic section as the base with second tier memory section soldered to a mating contact pattern. This paper addresses the primary technological challenges for reducing contact pitch and package-on-package interface technology. Research results will be presented that will illustrate multiple methods for forming smaller and finer pitch contacts on the base package section using existing wire-bond and transfer mold technology. The process developed utilizes copper bond-wire that enables several profile variations and can furnish an array configured contact pitch at or below 200µm. The benefits are immediately seen. This interconnect solution is very economical and lends itself to a wide variety of 3D
packaging,including multiple-rows and area array,fan-in and fan-out,flat or step mold,bond wires present on bottom or top package,bottom package face-up or face-down die orientations.