Study of Copper Thickness Distribution in Through Hole at the Early Stage of Copper Filled Plating
In laptop and tablet CPU/GPU applications, package thickness tends to be thinner since it brings lighter weight, lower product thickness, and shorter interconnection distance. To decrease package thickness, several parts of the package structure can be considered, such as bump height, ball height, die thickness, and substrate thickness. This study focuses on the thickness reduction of the substrate core.
The copper-filled plating technique will be used to fill the through hole instead of resin plugging when the substrate core becomes thinner, from over 400 μm to below 200 μm. However, during the copper-filled plating process, through hole opening tends to be closed earlier than through hole center due to the nature of electroplating. Consequently, voids are easy to form, causing delamination and crack risk during package reliability tests when the void area is too large or the barrel thickness is not enough. This research mainly explored copper distribution at the early stage of plating since it is important for minimizing void size and controlling barrel thickness. Various combinations of flow rate and current density have been designed to have different throwing powers and interactions with additives. From the results, uniform copper distribution and secured barrel thickness with low current density and high flow rate conditions were demonstrated. At the same time, successful inhibition of copper deposition around the through hole opening lets plating chemicals reach the center of the through hole. Therefore, void size can be minimized to lower the risk of package reliability failure.