Assembly Reliability of TSOP/DFN PoP Stack Package
Numerous 3D stack packaging technologies have been implemented by industry for use in microelectronics memory applications. This paper presents a reliability evaluation of a particular package-on-package (PoP) that offers a reduction in overall PCB board area requirements while allowing for increases in functionality. It utilizes standard,readily available device packaging methods in which high-density packaging is achieved by: (1) using standard “packaged” memory devices,(2) using standard 3-dimensional (3-D) interconnect assembly. The stacking approach provides a high level of functional integration in well-established and already functionally tested packages. The stack packages are built from TSOP packages with 48 leads,stacked either 2-high or 4-high,and integrated into a single dual-flat-no-lead (DFN) package. To determine thermal cycle reliability,daisy-chain packages were soldered either using lead-free or tin-lead solder with added additional daisy-chain patterns on the PCB to enable resistance monitoring of the stack at thermal cycling intervals. The 3-D stacks were bonded to the board for improving resistance to mechanical loading such as drop and vibration. A number of 2-high and 4-high 3-D stack assemblies were subjected to thermal cycling in the range of -55°Cto +125°C. The daisy-chain resistances were measured at RT and at 50 cycle intervals during thermal cycling. Test results to 500 thermal cycles are presented as well as images gathered from X-ray and optical microscopy to illustrate damage progression and to establish failure mechanisms. Furthermore,comparison was also made between 2D X-ray and X-ray tomography with optical microscopy to determine effectiveness of these non-destructive evaluation techniques. The paper concludes with a summary and recommendations for the next step of investigation.